教授、博士生导师

办公地址：理科楼群2号楼2714

邮寄地址：
          北京市北京大学
          微电子所SOI研究室 
          100871

Email: huangr@ime.pku.edu.cn 
电话: (010) 6275-2549

博士 北京大学计算机系微电子专业，1997

SOI技术、纳米量级新结构器件及制备工艺技术

射频电路技术研究 

模型模拟

Selected Publications

(1) Ru Huang, JinYan Wang, Xing Zhang and YangYuan Wang, Hot Carrier Induced Degradation in Mesa-Isolated n-Channel SOI MOSFET's Operating in a Bi-MOS Mode, IEEE Transaction on Electron Device, Vol.48, No.8, p.1594-1598, August 2001.

(2) Ru Huang, Xing Zhang and Yangyuan Wang, A high-performance SOI Drive-in Gate Controlled Hybrid Transistor(DGCHT), IEEE Transaction on Electron Devices, vol.45, p.2079, Sept. 1998.

(3) Ru Huang, Ruqi Han and Yangyuan Wang, Modeling for the current-voltage characteristics of SOI submicrometer gate controlled hybrid transistors (GCHT's), International Journal of Electronics, vol.88, No.3, p.287-p.300, March 2001.

(4) Ru Huang，Ruqi Han and Yangyuan Wang, Analytical modeling for the collector current in SOI gate controlled hybrid transistor, Solid State Electronics, vol.39(12), p.1816, 1996. (被G.Workman, p.2138，ED.45，1998；W.Zhang, p. ED.47, 2000；J.P.Conlinge, "Silicon-on-insulater technology:materials to VLSI", p.197, KLUWER ACADEMIC PUBLISHERS, 1997引用)

(5) Ru Huang and YangYuan Wang, Comprehensive analysis of short channel effect in SOI Gate Controlled Hybrid Transistor (GCHT), International Journal of Electronics, vol.88, No.6, p.685, June 1999.