Center for Nanoscale Science and Technology

    PENG GAO

    • Emailp-gao(AT)pku.edu.cn
    • Phone010-62745365
    • DepartmentSchool of Physics, Peking University
    • Research Interest
    • Homepagehttp://www.phy.pku.edu.cn/~pgao/home.html

    Main Publications:1.    P.Gao*, L.P.Wang, Y.-Y. Zhang*, Y. Huang, L. Liao, P. Sutter, K. H. Liu, D.P. Yu., and E.-G. Wang, “High-Resolution Tracking Asymmetric Lithium Insertion and Ext

    1. Information


    Main Publications:

    1.    P.Gao*, L.P.Wang, Y.-Y. Zhang*, Y. Huang, L. Liao, P. Sutter, K. H. Liu, D.P. Yu., and E.-G. Wang, “High-Resolution Tracking Asymmetric Lithium Insertion and Extraction and Local Structure Ordering in SnS2”, Nano Letters 16, 5582 (2016).

    2.    P. Gao*, H.-J. Liu, Y.-L. Huang, Y.-H. Chu, R.Ishikawa, B. Feng, Y. Jiang, N. Shibata, E.-G. Wang, Y. Ikuhara, “Atomic Mechanism of Polarization-Controlled Surface Reconstruction in Ferroelectric Thin Films”, Nature Communications 7, 11318 (2016).

    3.    P. Gao*, L.P. Wang, Y.Y. Zhang, Y. Huang, K.H. Liu, “Atomic-Scale Probing of the Dynamics of Sodium Transport and Intercalation Induced Phase Transformations in MoS2”, ACS nano 9, 11296 (2015).

    4.    P. Gao, J. Britson, C. T. Nelson, J. R. Jokisaari, C. Duan, M. Trassin, S-H. Baek, H. Guo, L. Li, Y. Wang, Y.-H. Chu, A. M. Minor, C-B. Eom, R. Ramesh, L-Q. Chen, and X.Q. Pan*, “Ferroelastic domain switching dynamics under electrical and mechanical excitations”, Nature Communications 5:3801 | DOI: 10.1038/ncomms4801 (2014).

    5.    P. Gao, J. Britson, J. R. Jokisaari, C. T. Nelson, S.-H. Baek, Y. Wang, C.-B. Eom, L.-Q. Chen and X.Q. Pan*, “Atomic Scale Mechanisms of Ferroelastic Domain Wall Mediated Ferroelectric Switching”, Nature Communications 4:2791 doi: 10.1038/ncomms3791 (2013).

    6.    P. Gao, C. T. Nelson, J. R. Jokisaari, Y. Zhang, S-H. Baek, C. W. Bark, E-G Wang, Y. M. Liu, J. G. Li, C-B Eom, and X. Q. Pan* “Direct observations of retention failure in ferroelectric memories”. Advanced Materials 24, 1106-1110 (2012).

    7.    Y. Yang, P. Gao, S. Gaba, T. Chang, X. Q. Pan, and W. Lu*, “Observation of Conducting Filament Growth in Nanoscale Resistive Memories”. Nature Communications 3,732 (2012).

    8.    C. T. Nelson, P. Gao, J. R. Jokisaari, K. Zhang, C. Heikes, C. Adamo, A. Melville, B. Winchester, Y. J. Gu, Y. M. Liu, S-H Baek, C. M. Folkman, E-G. Wang, C-B Eom, J. Y. Li, L-Q. Chen, D. G. Schlom, and X. Q. Pan*, “Domain dynamics during ferroelectric switching”. Science 334, 968 (2011).

    9.    P. Gao, C. T. Nelson, J. R. Jokisaari, S-H Baek, C. W Bark, Y. Zhang, E-G. Wang, D. G. Schlom, C-B. Eom, and X. Q. Pan*, “Revealing the role of defects in ferroelectric switching with atomic resolution”. Nature Communications 2, 591 (2011).

    10.  P. Gao, Z. C. Kang, W. Y. Fu, W. L. Wang, X. D. Bai* and E. G. Wang*, “Electrically driven redox process of cerium oxides”. J. Am. Chem. Soc 132, 4197-4201 (2010).